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| Datasheet File OCR Text: |
| ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation at TA = 25 OC Power Dissipation at TC = 25 OC Operating and Storage Temperature Range Symbol VCBO VCES VCEO VEBO IC ICM IB PD PD TS Value 120 100 100 6 4 7 1 1.25 36 - 65 to + 150 Unit V V V V A A A mW mW O C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 500 mA at VCE = 1 V, IC = 2 A at VCE = 2 V, IC = 1 A at VCE = 5 V, IC = 10 mA Collector Base Cutoff Current at VCB = 120 V Collector Emitter Cutoff Current at VCE = 100 V Emitter Base Cutoff Current at VEB = 5 V Collector Emitter Breakdown Voltage at IC = 1 mA Collector Emitter Saturation Voltage at IC = 2 A, IB = 200 mA Base Emitter On Voltage at VCE = 1 V, IC = 2 A Transition Frequency at VCE = 1 V, IC = 250 mA Symbol hFE hFE hFE hFE ICBO ICES IEBO V(BR)CEO VCE(sat) VBE(on) fT Min. 100 15 100 15 100 3 Max. 260 260 100 100 1 0.8 1.5 - Unit A A mA V V V MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 19/06/2008 CD |
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